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25 October 2007 Mask inspection method for 45nm node device
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Abstract
Sensitivity of newly developed photo mask inspection tool with reflective optic was evaluated for 45nm DRAM device. To get the required defect sensitivity of mask, printability of mask defect on wafer were simulated using in house simulation tool. Simulation results were compared with inspection results. Characteristic and sensitivity comparison between conventional transmissive and reflective optic tools were evaluated for several types of mask layer of 45nm and 55nm DRAM according to pixel size of detector of inspection tools. This reflective optic with short working distance was equivalent in sensitivity to transmissive optic tool. Mask for 45nm DRAM can be qualified by current status of the art inspection tools.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sunghyun Oh, Yongkyoo Choi, Daeho Hwang, Goomin Jeong, and Oscar Han "Mask inspection method for 45nm node device", Proc. SPIE 6730, Photomask Technology 2007, 673029 (25 October 2007); https://doi.org/10.1117/12.746864
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