Translator Disclaimer
Paper
30 October 2007 Multi-layer reticle (MLR) strategy application to double-patterning/double-exposure for better overlay error control and mask cost reduction
Author Affiliations +
Abstract
Double-patterning lithography / double-exposure lithography is believed to be a solution in order to enable the 32nm-Half-Pitch (HP) and below process node until EUV lithography infrastructure is ready. However, one of the biggest challenges is the overlay budget along with critical dimension (CD) control. In this paper, we propose that instead of using multiple masks for the DPL (STD DPL), multiple split patterns are printed on a single mask so that each pattern is separately or simultaneously exposed onto a wafer in order to reduce the mask-to-mask overlay error. This can also reduce the mask cost and mask manufacturing time compared with STD DPL, at the expense of reducing manufacturing throughput. We propose two ideas about how to place the split patterns in a single mask and simulate corresponding shot throughput comparisons. The results show that by using multi-layer reticle (MLR) strategy for splitting the original layout into 2 split patterns onto a single mask (Method I), we achieve: 1) reduction of the mask-to-mask overlay error factor 2) use of a single mask (reducing mask costs) and 3) reduction of wafer shot throughput to roughly 50% of that achieved by STD DPL. Also by using our new approach of placing multiple-split patterns to form the arrays within the mask scribe (Method II), we achieve: 1) reduction of the mask-to-mask overlay error factor 2) use of a single mask (reducing mask costs) and 3) drastically improved wafer shot throughput (at least 90% of the STD DPL, 180% of Method I).
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuhisa Yamamoto, Rodney Rigby, and Jason Sweis "Multi-layer reticle (MLR) strategy application to double-patterning/double-exposure for better overlay error control and mask cost reduction", Proc. SPIE 6730, Photomask Technology 2007, 67302X (30 October 2007); https://doi.org/10.1117/12.746158
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top