Paper
30 October 2007 Correction technique of EBM-6000 prepared for EUV mask writing
Author Affiliations +
Abstract
Image placement (IP) errors caused by electro-static chuck (ESC) and non-flatness of mask are additional factors in writing extreme ultra-violet (EUV) mask, and minimizing their influences is being fervently addressed. New correction technique of EBM-6000 has been developed for EUV mask writing based on the conventional grid matching correction (GMC) without ESC to obtain good reproducibility to satisfy user's requirement to develop EUV mask at an early stage.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shusuke Yoshitake, Hitoshi Sunaoshi, Jun Yashima, Shuichi Tamamushi, and Munehiro Ogasawara "Correction technique of EBM-6000 prepared for EUV mask writing", Proc. SPIE 6730, Photomask Technology 2007, 673030 (30 October 2007); https://doi.org/10.1117/12.747748
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Cited by 5 scholarly publications.
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KEYWORDS
Photomasks

Extreme ultraviolet

Metrology

Extreme ultraviolet lithography

Error analysis

Reflectivity

Semiconducting wafers

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