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30 October 2007 Coping with double-patterning/exposure lithography by EB mask writer EBM-6000
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Abstract
Double exposure / Double pattering methodologies are being adopted to extend 193nm optical lithography until the next generation lithography, most likely the EUV, is solidified. The Double exposure / Double patterning methodologies require tighter image-placement accuracy and Critical Dimension (CD) controls on a mask than the conventional single exposure technique. NuFlare Technology's mask writer, EBM-6000 (1), is capable of achieving the required CD control and high patterning resolution as fine as 35 nm, that are required for the hp 45nm lithography with Double exposure / Double patterning methodologies, when newly developed resist (i.e. "low-sensitivity" resist) is used, as shown at several occasions to date. Further, image-placement control with EBM-6000 has been improved based on extensive error budget analysis to comply with the tight image-placement specifications required by the Double exposure / Double Patterning lithography. This paper will show the results of the analysis and improvement of the image-placement accuracy of EBM-6000 series mask writers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamikubo, Rieko Nishimura, Kaoru Tsuruta, Kiyoshi Hattori, Jun Takamatsu, Shusuke Yoshitake, Hiroshi Nozue, Hitoshi Sunaoshi, and Shuichi Tamamushi "Coping with double-patterning/exposure lithography by EB mask writer EBM-6000", Proc. SPIE 6730, Photomask Technology 2007, 673031 (30 October 2007); https://doi.org/10.1117/12.747745
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