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23 August 2007 Q-switched microchip-lasers with intracavity Raman conversion
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Proceedings Volume 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems; 67312L (2007) https://doi.org/10.1117/12.752926
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus
Abstract
Semi-classical theory of Q-switched microchip - lasers with transient and quasi-stationary intracavity Raman conversion has been developed. Rate wave equations describing generation of Stokes pulses of different orders and their multiwave mixing have been written and discussed in detail. Theoretical results agree well with experiments for passively Q-switched microchip - lasers with intracavity Raman conversion in crystals of Ba(NO3)2 and CaMoO4. It is shown, that intracavity Raman conversion in microchip - lasers represents a simple and effective method of generation of short Stokes pulses with duration as short as 100 ps, energy in the &mgr;J-range and peak power of up to several tens of kW.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Voitikov, Aleksander A. Demidovich, Aleksander S. Grabtchikov, Vladimir N. Burakevich, Viktor A. Lisinetskii, Miltcho B. Danailov, and Valentin A. Orlovich "Q-switched microchip-lasers with intracavity Raman conversion", Proc. SPIE 6731, International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 67312L (23 August 2007); https://doi.org/10.1117/12.752926
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