The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Chee Hing Tan; Souye C. Liew Tat Mun; Peter Vines; John P. R. David; Mark Hopkinson; Luke Wilson; Pantelis Aivaliotis

doi:10.1117/12.740701

16 October 2007 The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John P. R. David, Mark Hopkinson, Luke Wilson, Pantelis Aivaliotis

Author Affiliations +

Proceedings Volume 6740, Optical Materials in Defence Systems Technology IV; 67400J (2007) https://doi.org/10.1117/12.740701
Event: Optics/Photonics in Security and Defence, 2007, Florence, Italy

Abstract

We report measurements on a series of quantum dot infrared photodetectors grown with different combinations of monolayer thicknesses (2.2. 2.55 and 2.9 ML) and quantum dot layer sheet doping densities (6×10¹⁰ cm^-2 and 12×10¹⁰ cm^-2). The dark current and noise current were higher in devices grown with sheet doping density of 12×10¹⁰ cm^-2. At a given bias voltage the dark current and the noise current was found to be lowest in devices having 2.55 ML and sheet doping density of 6×10¹⁰ cm^-2. This combination gives a sheet doping density to dot density ratio of approximately unity. Highest gain was achieved in devices with 2.55 ML and sheet doping density of 6×10¹⁰ cm^-2.

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Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John P. R. David, Mark Hopkinson, Luke Wilson, and Pantelis Aivaliotis "The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors", Proc. SPIE 6740, Optical Materials in Defence Systems Technology IV, 67400J (16 October 2007); https://doi.org/10.1117/12.740701

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