Recent progress on GaN-based vertical cavity surface emitting lasers

T. C. Lu; C. C. Kao; G. S. Huang; H. C. Kuo; S. C. Wang

doi:10.1117/12.729281

25 September 2007 Recent progress on GaN-based vertical cavity surface emitting lasers

T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, S. C. Wang

Proceedings Volume 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV; 67660G (2007) https://doi.org/10.1117/12.729281
Event: Optics East, 2007, Boston, MA, United States

Abstract

We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.

Citation Download Citation

T. C. Lu, C. C. Kao, G. S. Huang, H. C. Kuo, and S. C. Wang "Recent progress on GaN-based vertical cavity surface emitting lasers", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660G (25 September 2007); https://doi.org/10.1117/12.729281

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