Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection

H. W. Li; P. Simmonds; H. E. Beere; B. E. Kardynał; D. A. Ritchie; A. J. Shields

doi:10.1117/12.737307

25 September 2007 Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection

H. W. Li, P. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, A. J. Shields

Proceedings Volume 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV; 67660N (2007) https://doi.org/10.1117/12.737307
Event: Optics East, 2007, Boston, MA, United States

Abstract

Single photon detection was realized at a telecom wavelength with quantum dot resonant tunneling diodes grown on an InP substrate. The structure contains a AlAs/In_0.53Ga_0.47As/AlAs quantum well with InAs quantum dots grown on the top AlAs barrier. The single photon detection efficiency of the device under 1310 nm illumination was measured to be about 0.35%±0.07% with a dark count rate of 1.58×10^-6 ns^-1. This corresponds to an internal efficiency of 6.3%.

Citation Download Citation

H. W. Li, P. Simmonds, H. E. Beere, B. E. Kardynał, D. A. Ritchie, and A. J. Shields "Quantum dot resonant tunneling diodes for telecom wavelength single-photon detection", Proc. SPIE 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, 67660N (25 September 2007); https://doi.org/10.1117/12.737307

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