Paper
10 September 2007 Novel nanostructures quantum dot based devices
S. Loualiche, A. LeCorre, J. Even, J C. Simon, A. Ramdane
Author Affiliations +
Abstract
The quantum dots have added great benefits to the photonic activity, among them the decoupling between the lattice parameter of the substrate and the dot has opened the way to enlarge the spectral windows which can be accessible on different substrates. For example on a GaAs substrate a long wavelength laser emission of 1.46 μm has been demonstrated at room temperature. The specific properties like: large material gain, large spectral bandwidth, high speed carrier dynamics, have improved device performances. The minimum threshold current densities of laser devices, the large spectral bandwidth of semiconductor optical amplifiers and the very high repetition rate and very short pulse width on mode locked lasers are other benefits.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Loualiche, A. LeCorre, J. Even, J C. Simon, and A. Ramdane "Novel nanostructures quantum dot based devices", Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 67790D (10 September 2007); https://doi.org/10.1117/12.734329
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KEYWORDS
Indium arsenide

Gallium arsenide

Quantum dots

Nanostructures

Quantum wells

Laser damage threshold

Telecommunications

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