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19 November 2007 Influence of flux on the growth of InAs quantum dots on GaAs patterned substrate
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67821W (2007) https://doi.org/10.1117/12.743028
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Kinetic Monte Carlo simulations are applied on the investigation of the epitaxial growth of self-assembled InAs quantum dots on GaAs substrate with periodic strain-relief patterns. The study is focused on the initial stage when the first sub-monolayer is forming on top of the wetting layer. The flux is one of the most important growth parameters, which are studied in detail. It is demonstrated that uniformly sized and regularly ordered island arrays can be obtained by controlling flux, by means of analyzing the surface morphology, average island size, island size distribution and the standard deviation of island size distribution. If interruption is introduced, the influence of flux will significant different. The uniformity and order of islands will greatly affect the locating of quantum dots in sequent 3-D growth.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuxin Song, Zhongyuan Yu, and Yumin Liu "Influence of flux on the growth of InAs quantum dots on GaAs patterned substrate", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821W (19 November 2007); https://doi.org/10.1117/12.743028
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