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19 November 2007 The strain energy density distribution of the capping layer surface for InAs/GaAs quantum dot along different growth directions
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67821X (2007) https://doi.org/10.1117/12.743706
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
In this paper, we calculated the strain distribution of low dimension structure using the elastic continuum model. The strain energy density distribution on the different thickness of capping layer surface for the self-organized InAs/GaAs quantum dots system is investigated by the numerical finite element method. The influence of the different growth directions on the strain energy density distributions can be found from the calculated results. The results can explain some experiment results, such as the ordering array of the quantum dots supper-lattices. So the growth direction and spacing thickness can be regarded as another control parameters for strain engineering self-organized semiconductor quantum materials. As a comparison, the strain distributions of other low-dimension self-organized materials are also calculated.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhongyuan Yu and Yumin Liu "The strain energy density distribution of the capping layer surface for InAs/GaAs quantum dot along different growth directions", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821X (19 November 2007); https://doi.org/10.1117/12.743706
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