Large aperture low threshold current 980nm VCSELs fabricated with pulsed anodic oxidation

Jinjiang Cui; Yongqiang Ning; Te Li; Guangyu Liu; Yan Zhang; Biao Peng; Yanfang Sun; Lijun Wang

doi:10.1117/12.742775

12 December 2007 Large aperture low threshold current 980nm VCSELs fabricated with pulsed anodic oxidation

Jinjiang Cui, Yongqiang Ning, Te Li, Guangyu Liu, Yan Zhang, Biao Peng, Yanfang Sun, Lijun Wang

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678228 (2007) https://doi.org/10.1117/12.742775
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500μm-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle θ_paralleland vertical divergence angle θ_{perpendicular} are as low as 15.3° and 13.8° without side-lobes at a current of 6A.

Citation Download Citation

Jinjiang Cui, Yongqiang Ning, Te Li, Guangyu Liu, Yan Zhang, Biao Peng, Yanfang Sun, and Lijun Wang "Large aperture low threshold current 980nm VCSELs fabricated with pulsed anodic oxidation", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678228 (12 December 2007); https://doi.org/10.1117/12.742775

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