Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer

Huining Han; Fangdi Zhang; Wei Yang; Libo Cai; Min Zhang; Peida Ye

doi:10.1117/12.743661

19 November 2007 Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer

Huining Han, Fangdi Zhang, Wei Yang, Libo Cai, Min Zhang, Peida Ye

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678237 (2007) https://doi.org/10.1117/12.743661
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

Based on rate equations for carrier density in the active region of the QDSOA, the performance of a XOR gate using a quantum-dot semiconductor optical amplifier- based Mach-Zehnder interferometer (QDSOA-MZI) is analyzed in terms of Q factor through numerical simulations. The control pulse energy, the pulse width and the carrier capture time from the wetting layer into the dots are examined, which prove to be relevant to the Q factor. Our numerical results show that at 160Gb/s a high quality output signal with a Q factor over 5.9dB can be achieved.

Citation Download Citation

Huining Han, Fangdi Zhang, Wei Yang, Libo Cai, Min Zhang, and Peida Ye "Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678237 (19 November 2007); https://doi.org/10.1117/12.743661

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