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1 August 2007 Electronic and thermal nonlinear refractive indices of SOI and nano-patterned SOI measured by Z-scan method
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Proceedings Volume 6785, ROMOPTO 2006: Eighth Conference on Optics; 67850P (2007) https://doi.org/10.1117/12.756845
Event: ROMOPTO 2006: Eighth Conference on Optics, 2006, Sibiu, Romania
Abstract
We measure electronic and thermal nonlinear refractive indices of periodically nano-patterned and un-patterned siliconon- insulator (SOI) in comparison with that of bulk silicon, using a fast reflection Z-scan setup with a high-repetition-rate fs laser (at 800 nm wavelength), and a new procedure for discrimination between electronic and thermal nonlinearities. The electronic nonlinear response of nano-structured SOI is strongly enhanced in comparison with those of un-patterned SOI and of bulk Si. These results could be important in silicon photonics for optical devices with nonlinearity controlled by periodic nano-structuring.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Petris, F. Pettazzi, E. Fazio, C. Peroz, Y. Chen, V. I. Vlad, and M. Bertolotti "Electronic and thermal nonlinear refractive indices of SOI and nano-patterned SOI measured by Z-scan method", Proc. SPIE 6785, ROMOPTO 2006: Eighth Conference on Optics, 67850P (1 August 2007); https://doi.org/10.1117/12.756845
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