Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide

Asawin Sinsarp; Takashi Manago; Fumiyoshi Takano; Hiro Akinaga

doi:10.1117/12.799422

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3 April 2008 Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide

Asawin Sinsarp, Takashi Manago, Fumiyoshi Takano, Hiro Akinaga

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Proceedings Volume 6793, International Workshop and Conference on Photonics and Nanotechnology 2007; 67930K (2008) https://doi.org/10.1117/12.799422
Event: International Workshop and Conference on Photonics and Nanotechnology 2007, 2007, Pattaya, Thailand

Abstract

We fabricated an FePt/MgO tunneling junction (Fe₅₅Pt₄₅) with out-of-plane magnetization on a GaAs-based light-emitting-diode structure. The technique of spin-polarized electroluminescence (EL) was used to study the electrical spin injection from FePt into GaAs at room temperature. Under the magnetic field of 1 T the spin polarization of the injected electrons was at least 6.0%. The zero-magnetic-field spin polarization, which indicates the spin injection without magnetic field, was at least 3.3%.

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Asawin Sinsarp, Takashi Manago, Fumiyoshi Takano, and Hiro Akinaga "Electrical spin injection from an iron-rich iron-platinum thin film into gallium arsenide", Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930K (3 April 2008); https://doi.org/10.1117/12.799422

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