Ion implanted integrated Bragg gratings in SOI waveguides

M. P. Bulk; A. P. Knights; P. E. Jessop

doi:10.1117/12.778738

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26 October 2007 Ion implanted integrated Bragg gratings in SOI waveguides

M. P. Bulk, A. P. Knights, P. E. Jessop

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Proceedings Volume 6796, Photonics North 2007; 67961C (2007) https://doi.org/10.1117/12.778738
Event: Photonics North 2007, 2007, Ottawa, Canada

Abstract

We report the realization of a Bragg grating optical filter at telecommunication wavelengths in silicon-on-insulator (SOI) through the use of ion implantation induced refractive index modulation. Silicon self-irradiation damage accumulation results in an increase of the refractive index to a saturated value, upon amorphization, of approximately 3.75. This makes it an interesting candidate for passive gratings as the silicon retains a planar surface, making it ideal for further processing. Monte Carlo simulations and coupled mode theory demonstrate the viability of the approach. Planar implanted SOI waveguides showed extinction ratios of -5 dB for TE and -2 dB for TM. An annealing study suggests complete amorphization was not achieved and future results should be improved dramatically.

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M. P. Bulk, A. P. Knights, and P. E. Jessop "Ion implanted integrated Bragg gratings in SOI waveguides", Proc. SPIE 6796, Photonics North 2007, 67961C (26 October 2007); https://doi.org/10.1117/12.778738

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