Monolithically integrated InGaAsP/InP 1x2 SOA optical switch

Ronald Millett; Trevor Hall; Karin Hinzer; Valery Tolstikhin; Kirill Pimenov; Yury Logvin; Brad Robinson; Zhilin Peng; Henry Schriemer

doi:10.1117/12.778938

26 October 2007 Monolithically integrated InGaAsP/InP 1x2 SOA optical switch

Ronald Millett, Trevor Hall, Karin Hinzer, Valery Tolstikhin, Kirill Pimenov, Yury Logvin, Brad Robinson, Zhilin Peng, Henry Schriemer

Author Affiliations +

Proceedings Volume 6796, Photonics North 2007; 67962Y (2007) https://doi.org/10.1117/12.778938
Event: Photonics North 2007, 2007, Ottawa, Canada

Abstract

This paper describes a monolithically integrated 1x2 SOA-based switch in InGaAsP/InP. It can be fabricated in one epitaxial growth step, has a footprint of only 4.2mm x 0.35mm, operates on sub-ns time scales and is meant to be integrated with other passive and active waveguide devices on the same InP substrate. The design process optimized the device dimensions using a modified finite-element modal-overlap method. This method provides significant computational savings compared to full beam-propagation method (BPM) simulations. The device uses a single-mode vertical integration technique for a monolithic integration of active and passive waveguide components. To compensate for the polarization sensitivity, tensile-strained quantum well active regions are used. To switch a signal to an output waveguide, the SOA in that waveguide is forward-biased while the SOA in the other output waveguide is reverse-biased to provide a large attenuation (>30dB), resulting in minimal crosstalk. This switch has an estimated insertion loss of 4dB, with a polarization dependent loss of < 1dB.

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Ronald Millett, Trevor Hall, Karin Hinzer, Valery Tolstikhin, Kirill Pimenov, Yury Logvin, Brad Robinson, Zhilin Peng, and Henry Schriemer "Monolithically integrated InGaAsP/InP 1x2 SOA optical switch", Proc. SPIE 6796, Photonics North 2007, 67962Y (26 October 2007); https://doi.org/10.1117/12.778938

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