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26 October 2007 Monolithically integrated InGaAsP/InP 1x2 SOA optical switch
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Proceedings Volume 6796, Photonics North 2007; 67962Y (2007)
Event: Photonics North 2007, 2007, Ottawa, Canada
This paper describes a monolithically integrated 1x2 SOA-based switch in InGaAsP/InP. It can be fabricated in one epitaxial growth step, has a footprint of only 4.2mm x 0.35mm, operates on sub-ns time scales and is meant to be integrated with other passive and active waveguide devices on the same InP substrate. The design process optimized the device dimensions using a modified finite-element modal-overlap method. This method provides significant computational savings compared to full beam-propagation method (BPM) simulations. The device uses a single-mode vertical integration technique for a monolithic integration of active and passive waveguide components. To compensate for the polarization sensitivity, tensile-strained quantum well active regions are used. To switch a signal to an output waveguide, the SOA in that waveguide is forward-biased while the SOA in the other output waveguide is reverse-biased to provide a large attenuation (>30dB), resulting in minimal crosstalk. This switch has an estimated insertion loss of 4dB, with a polarization dependent loss of < 1dB.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronald Millett, Trevor Hall, Karin Hinzer, Valery Tolstikhin, Kirill Pimenov, Yury Logvin, Brad Robinson, Zhilin Peng, and Henry Schriemer "Monolithically integrated InGaAsP/InP 1x2 SOA optical switch", Proc. SPIE 6796, Photonics North 2007, 67962Y (26 October 2007);


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