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28 December 2007 Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiode
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Abstract
The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ~0.5-0.6 A/W and -3dB frequency of ~14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wcm-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
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P. Susthitha Menon, Kumarajah Kandiah, Mohd Syuhaimi bin Abd Rahman, and Sahbudin Shaari "Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiode", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007); https://doi.org/10.1117/12.759055
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