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28 December 2007 Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiode
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The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ~0.5-0.6 A/W and -3dB frequency of ~14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wcm-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Susthitha Menon, Kumarajah Kandiah, Mohd Syuhaimi bin Abd Rahman, and Sahbudin Shaari "Novel 3D modeling of In0.53Ga0.47As lateral PIN photodiode", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679819 (28 December 2007);

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