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9 January 2008 Development of a flexible luminous device using hollow cathode discharge
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Abstract
This paper presents the fabrication and test of a flexible luminous device using hollow cathode discharge. The discharge device consists of three layers which are a thin anode layer, an insulation layer and a hollow cathode layer. The device has an array of 10 x 10 holes for the emission. The hole diameter and depth are 100 μm and 120 μm, respectively. The hollow cathode discharge occurs between two electrodes. The hollow cathode discharge usually has the characteristics of the high current density. The discharge device is fabricated by micromachining technology. The anode and the cathode are aluminum and nickel, respectively. Polyimide is chosen as an insulating material because of an excellent dielectric property and a good mechanical stability. The anode of aluminum is deposited by thermal evaporator. Polyimide is spin coated and the hollow cathode is fabricated by nickel electroplating. The thickness of the flexible luminous device is about 150 μm and total size of the device is 20 mm x 10 mm. The discharge test was performed in argon gas chamber at room temperature for various pressures. The current is measured during the discharge to various applied voltages. Current-voltage characteristics of the device were obtained for the operation voltage ranging from 250 to 300 V. The discharge appears at the applied voltage of 260 V in 360 torr. The discharge is also observed at the atmospheric pressure. Compared with a macro discharge device, this device operates at much higher pressure, even at 1 atm. The discharge test confirms that the fabricated device is feasible for a flexible display operating at the atmospheric pressure.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geunyoung Kim, Kang-il Kim, Inho Lim, Sang Sik Yang, and Soo-ghee Oh "Development of a flexible luminous device using hollow cathode discharge", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001B (9 January 2008); https://doi.org/10.1117/12.759273
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