Design, fabrication, and testing of 3C-SiC sensors for high temperature applications

Michele Pozzi; Alun J. Harris; James S. Burdess; Petros Argyrakis; Kin K. Lee; Rebecca Cheung; Gordon J. Phelps; Nicholas G. Wright

doi:10.1117/12.758245

11 January 2008 Design, fabrication, and testing of 3C-SiC sensors for high temperature applications

Michele Pozzi, Alun J. Harris, James S. Burdess, Petros Argyrakis, Kin K. Lee, Rebecca Cheung, Gordon J. Phelps, Nicholas G. Wright

Author Affiliations +

Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 68001S (2008) https://doi.org/10.1117/12.758245
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

SiC is widely recognized as an ideal candidate for electronics and sensors required to operate at extremely high temperatures. Cubic SiC (3C-SiC) is preferred to the hexagonal polytypes for the fabrication of mechanical devices due to its lower cost (a film is deposited on a Si substrate) and greater ease of fabrication. As the deposited SiC film is normally quite thin, some traditional designs of devices are not suitable. The Capacitive Ring-Electrode Accelerometer (CREA) introduced in this paper offers much greater design flexibility. Featuring a central boss of un-prescribed thickness, the value of its seismic mass can be set over a wide range, independently of the sensing capacitance. The latter is realized between a SiC electrode, which surrounds and moves together with the boss, and the underlying substrate. The CREA design was extensively analysed in a FE environment and prototypes were fabricated. Pressure sensors based on the deformable membrane principle and piezoresistive pickup have also been designed, fabricated and tested. The dependence of apex displacement on pressure was used to extract the Young's modulus and the residual stress of the SiC film (bulge test). The membrane was investigated by optical profilometry at various values of pressure and at temperatures between 300 K and 800 K. The shape of the membrane was compared with the FE predictions with a positive outcome.

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Michele Pozzi, Alun J. Harris, James S. Burdess, Petros Argyrakis, Kin K. Lee, Rebecca Cheung, Gordon J. Phelps, and Nicholas G. Wright "Design, fabrication, and testing of 3C-SiC sensors for high temperature applications", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001S (11 January 2008); https://doi.org/10.1117/12.758245

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KEYWORDS

Silicon carbide

Sensors

Silicon

Capacitance

Semiconducting wafers

Temperature metrology

Optical fabrication

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