Study on in-situ measuring method for average stress gradient of a MEMS film

Hua Rong; Ming Wang

doi:10.1117/12.759463

9 January 2008 Study on in-situ measuring method for average stress gradient of a MEMS film

Hua Rong, Ming Wang

Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 680020 (2008) https://doi.org/10.1117/12.759463
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

An electrostatically actuated in-situ measuring method for average stress gradient of a MEMS film was proposed based on pull-in voltages of a set of cantilevers. The key of the measuring method is to realize accurate calculation of pull-in voltages of the cantilevers. To increase the accuracy of the measurement, bending of the cantilevers along the width direction due to the stress gradient was considered. Actual simulations indicate that the calculating speed and the accuracy of the measuring method are ideal, and the method can be applied to in-situ measurement.

Citation Download Citation

Hua Rong and Ming Wang "Study on in-situ measuring method for average stress gradient of a MEMS film", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 680020 (9 January 2008); https://doi.org/10.1117/12.759463

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