Diffusion dark current in CCDs and CMOS image sensors

M. M. Blouke

doi:10.1117/12.787729

29 February 2008 Diffusion dark current in CCDs and CMOS image sensors

M. M. Blouke

Proceedings Volume 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX; 68160I (2008) https://doi.org/10.1117/12.787729
Event: Electronic Imaging, 2008, San Jose, California, United States

Abstract

Long neglected as unimportant, the dark current that arises due to diffusion from the bulk is assuming a more important role now that CCD and CMOS imagers are finding their way into consumer electronics which must be capable of operating at elevated temperatures. Historically this component has been estimated from the diffusion related current of a diode with an infinite substrate. This paper explores the effect of a substrate of finite extent beneath the collecting volume of the pixel for both a front-illuminated device and a thinned back-illuminated device and develops corrected expressions for the diffusion related dark current. The models show that the diffusion dark current can be much less than that predicted by the standard model

Citation Download Citation

M. M. Blouke "Diffusion dark current in CCDs and CMOS image sensors", Proc. SPIE 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 68160I (29 February 2008); https://doi.org/10.1117/12.787729

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