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29 February 2008 A 800(H) x 600(V) high sensitivity and high full well capacity CMOS image sensor with active pixel readout feedback operation
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Abstract
A high sensitivity and high full well capacity CMOS image sensor using active pixel readout feedback operation with positions of pixel select switch, operation timings and initial bias conditions has been reported. 1/3-inch 5.6-μm pixel pitch 800(H) x 600(V) color CMOS image sensors with the switch X set on or under the pixel SF have been fabricated by a 0.18-μm 2-Poly 3-Metal CMOS technology. The comparison of the active pixel readout feedback operation between two CMOS image sensors, which only have the deference of the switch X's position, has performed. As to the result, the switch X set on the pixel SF is favor for the active pixel readout feedback operation to improve the readout gain and the S/N ratio. This CMOS image sensor achieves high readout gain, high conversion gain, low input-referred noise and high full well capacity by the active pixel readout feedback operation.
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Woonghee Lee, Nana Akahane, Satoru Adachi, Koichi Mizobuchi, and Shigetoshi Sugawa "A 800(H) x 600(V) high sensitivity and high full well capacity CMOS image sensor with active pixel readout feedback operation", Proc. SPIE 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 68160R (29 February 2008); https://doi.org/10.1117/12.766027
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