Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth

Chang Zhao; Man Zhao

doi:10.1117/12.767738

7 January 2008 Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth

Chang Zhao, Man Zhao

Proceedings Volume 6824, Semiconductor Lasers and Applications III; 68240B (2008) https://doi.org/10.1117/12.767738
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

A detailed kinetic Monte Carlo simulation (KMC) is developed to investigate the temperature dependence of semiconductor quantum dot (QD) grown by molecular beam epitaxy syetem. We find that growth temperature plays an important role in determining the size of the QD. The simulation results are compared with the experiment and the agreement between them indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs.

Citation Download Citation

Chang Zhao and Man Zhao "Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240B (7 January 2008); https://doi.org/10.1117/12.767738

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