Broad area semiconductor lasers with Gaussian-like current distribution

Zhongliang Qiao; Yanping Yao; Huang Bo; Baoxue Bo

doi:10.1117/12.755805

7 January 2008 Broad area semiconductor lasers with Gaussian-like current distribution

Zhongliang Qiao, Yanping Yao, Huang Bo, Baoxue Bo

Proceedings Volume 6824, Semiconductor Lasers and Applications III; 682415 (2008) https://doi.org/10.1117/12.755805
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

According to the principle of carrier diffusion within injection stripe, we fabricated a new type of high power single quantum well broad area semiconductor laser. The designed device has a special current injection stripe which results in a Gaussian-like photon gain laterally. The output power is up to 3.75 watt when the beam quality factor M² is 10.6 in continuous-wave operation, and the beam quality factor M² is 5.4 when the output power is 2.5 watt at the same operation condition. The beam quality of broad area semiconductor single quantum well laser has been improved obviously by the designed device

Citation Download Citation

Zhongliang Qiao, Yanping Yao, Huang Bo, and Baoxue Bo "Broad area semiconductor lasers with Gaussian-like current distribution", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 682415 (7 January 2008); https://doi.org/10.1117/12.755805

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