Bare wafer metrology challenges in microlithography at 45-nm node and beyond

Chunsheng Huang

doi:10.1117/12.759738

21 November 2007 Bare wafer metrology challenges in microlithography at 45 nm node and beyond

Chunsheng Huang

Proceedings Volume 6827, Quantum Optics, Optical Data Storage, and Advanced Microlithography; 682723 (2007) https://doi.org/10.1117/12.759738
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The shrinking depth of focus (100-150 nm) of high numerical aperture immersion microlithography optics dictates a tight wafer flatness budget. Wafer flatness nanotopography (NT), and edge roll off (ERO) are critical parts of the equation in immersion microlithographic technology at the 45 nm node and beyond. Wafer features at the nanometer level could result not only in focus variation of the litho process, or thin film thickness variation in CMP process, but also in structural defects of the devices. Therefore, the metrology to measure nanometer level features and to control the quality of wafer geometry is a key to the success of IC production at the 45 nm node and beyond.

Citation Download Citation

Chunsheng Huang "Bare wafer metrology challenges in microlithography at 45 nm node and beyond", Proc. SPIE 6827, Quantum Optics, Optical Data Storage, and Advanced Microlithography, 682723 (21 November 2007); https://doi.org/10.1117/12.759738

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