Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using Cs2CO3 buffer layer

Shu-ming Chen; Yong-bo Yuan; Jia-rong Lian; Ze-feng Xie; X. Zhou

doi:10.1117/12.755840

20 November 2007 Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using Cs₂CO₃ buffer layer

Shu-ming Chen, Yong-bo Yuan, Jia-rong Lian, Ze-feng Xie, X. Zhou

Author Affiliations +

Proceedings Volume 6828, Light-Emitting Diode Materials and Devices II; 68280O (2007) https://doi.org/10.1117/12.755840
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

We report a significant enhancement of the electron injection from n-Si bottom cathodes to organics by using a thin layer of Cs₂CO₃ as electron injection layer, leading to the reduction of the turn-on voltages and the improvement of the efficiencies in Alq₃ based inverted top-emitting OLEDs with n-Si directly as cathodes. With structure of n-Si/ Cs₂CO₃ (2 nm)/TPBi (10 nm)/ Alq₃ (40 nm)/ NPB (40 nm)/ MoO₃ (2 nm)/Ag (20 nm)/ Alq₃ (40 nm), where the 10 nm TPBi is hole blocking layer for improving charge balance in emission zone and the 40 nm Alq₃ layer on Ag anode is the capping layer for improving light out-coupling efficiency, the inverted top-emitting OLEDs show a turn on voltage of 6 V and a driving voltage of 10 V for 100 cd/m² with a maximum efficiency of around 1.5 cd/A, which are superior compared to the relevant results ever reported.

Citation Download Citation

Shu-ming Chen, Yong-bo Yuan, Jia-rong Lian, Ze-feng Xie, and X. Zhou "Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using Cs₂CO₃ buffer layer", Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280O (20 November 2007); https://doi.org/10.1117/12.755840

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