Paper
20 November 2007 Improved efficiency in top-emitting OLEDs with p-type Si anode
Yong-bo Yuan, Shu-ming Chen, Jia-rong Lian, Ze-feng Xie, Xiang Zhou
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Abstract
We report improved efficiency in Alq based top-emitting OLEDs with p-Si anode by using an effective electron injection layer and a hole blocking layer to realize better charge balance and recombination. With structure of p-Si/SiO2/MoO3 (2 nm)/NPB (40 nm)/Alq (40 nm)/TPBI (10 nm)/Cs2CO3 (2 nm)/Ag (20 nm)/Alq (40 nm), where the 40 nm Alq capping layer on top Ag cathode was used to improve out-coupling efficiency, the devices show a turn on voltage of 5.5 V and a driving voltage of 10 V for 100 cd/m2 with a maximum efficiency of exceeding 1.2 cd/A and a maximum power efficiency of 0.4 lm/W, which are comparable with the conventional OLEDs and encouraging and promising for Si based OLEDs and optoelectronics.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-bo Yuan, Shu-ming Chen, Jia-rong Lian, Ze-feng Xie, and Xiang Zhou "Improved efficiency in top-emitting OLEDs with p-type Si anode", Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280P (20 November 2007); https://doi.org/10.1117/12.755833
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KEYWORDS
Silicon

Organic light emitting diodes

Electroluminescence

Electrodes

Reflectivity

Silver

Carbon monoxide

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