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4 January 2008 The surface treatment of silicon wafer by microwave down-stream plasma etching
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Abstract
Silicon is one of the most common materials used in optical micro-electro-mechanical systems (MEMS). For the optical applications the surface quality plays a vital role in the performance of elements, so the control of surface morphology, such as surface smoothing, is very important to produce optical MEMS elements with high reliability and high quality. The most commonly used etching methods such as reactive ion etching (RIE) always left damage layer on the etched surface leaving the surface with high roughness. In this paper 2.54GHz micro wave excited plasma was used to treat the silicon surface, and the different etching conditions of CF4 and O2 mixture were investigated. The surface quality after this down-stream plasma treatment was studied by atomic force microscopy (AFM) measurement.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Ju and Wenkui Wang "The surface treatment of silicon wafer by microwave down-stream plasma etching", Proc. SPIE 6831, Nanophotonics, Nanostructure, and Nanometrology II, 683114 (4 January 2008); https://doi.org/10.1117/12.755881
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