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4 January 2008 Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD
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Self-assembled InGaN quantum dots are fabricated in a two-flow horizontal MOCVD reactor maintained at the pressure of 200 torr. The precursors were trimethyl-gallium (TMG) and trimethyl-indium (TMI) and ammonia (NH3), and the carrier gas was N2 and H2. The optimum condition for periodically interrupted growth (PIG) mode was deduced to fabricate the InGaN quantum dots. NH3 was supplied in PIG mode with the interval of 3 seconds and 5 seconds while TMG and TMI were supplied continuously. The carrier gas was N2 in QDs growth, while H2 in nucleation and buffer layer growth. The influence of number of periodic interrupted NH3 on the structural and optical properties of InGaN quantum dots was investigated by AFM, FE-SEM and low temperature photoluminescence (LT-PL). The AFM images give the size of InGaN QDs with diameter of 20 ~ 50 nm, height of 3 ~ 10 nm and density of 1010 #/cm2 ~ 1011 #/cm2. A strong peak at 362.2 nm (3.41eV) and broad emission peak in 435 nm (2.86 eV) were evolved in the photoluminescence measurement using Nd-YAG laser. The composition of QDs was estimated to be In0.14Ga0.86N from the relation between peak energy and indium content. Hence. The periodic interruption growth enables the fabrication of self- assembled InGaN QDs with high density and uniform size.
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Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, and Woo-Gwang Jung "Fabrication of InGaN quantum dots by periodically interrupted growth in MOCVD", Proc. SPIE 6831, Nanophotonics, Nanostructure, and Nanometrology II, 683119 (4 January 2008);

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