Charge accumulation in composite dielectric layers in capacitive RF MEMS switches

Linxian Zhan; Haisheng San; Gang Li; Peng Xu; Xuyuan Chen

doi:10.1117/12.756133

4 January 2008 Charge accumulation in composite dielectric layers in capacitive RF MEMS switches

Linxian Zhan, Haisheng San, Gang Li, Peng Xu, Xuyuan Chen

Proceedings Volume 6836, MEMS/MOEMS Technologies and Applications III; 68360Z (2008) https://doi.org/10.1117/12.756133
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

In this paper, our work is focusing on investigating the mechanisms of the charge accumulation in dielectric layer of RF MEMS capacitive switches. In our experiments, silicon-nitride and silicon-oxide composite films, e.g., SiO₂+Si₃N₄ and SiO₂+Si₃N₄+SiO₂ films are chosen as the dielectric layers for study. The composite films were prepared by thermal oxidation and PECVD process. The Metal-Insulator-Semiconductor (MIS) structure was produced by using the composite films as the dielectric layer. The capacitance versus voltage (C-V) measurement is employed to study the space charge injection and relaxation process in the composite films. The results show that the charge accumulation can be reduced by using the composite films structure.

Citation Download Citation

Linxian Zhan, Haisheng San, Gang Li, Peng Xu, and Xuyuan Chen "Charge accumulation in composite dielectric layers in capacitive RF MEMS switches", Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360Z (4 January 2008); https://doi.org/10.1117/12.756133

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