Photoelectric measurement of the characteristic of square super-lattice pattern in DBD

Haitao Zhao; Lifang Dong; Weixia Xie; Weili Fan

doi:10.1117/12.755986

8 January 2008 Photoelectric measurement of the characteristic of square super-lattice pattern in DBD

Haitao Zhao, Lifang Dong, Weixia Xie, Weili Fan

Proceedings Volume 6838, Optoelectronic Devices and Integration II; 68381Q (2008) https://doi.org/10.1117/12.755986
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The influence of the air-concentration on the characteristic of the square super-lattice pattern in dielectric barrier discharge is investigated. The square super-lattice pattern is obtained in the mixture of air and argon at atmosphere pressure, and the air-concentration is changed from 0.1% to 5%. The patterns follow as the square pattern, quasi-crystal state, square super-lattice pattern, stripe pattern and hexagonal pattern when the applied voltage increases. The bifurcation scenario of the patterns dose not changes as the air-concentration changes. But the voltages of the patterns increase as the air-concentration increases. In addition, the influence of the air-concentration on the electron excited of the square super-lattice pattern is studied by using a monochromator with a CCD. The electron excited temperature T_e is estimated by using spectral lines intensity ratio method. It is found that the electron excited temperature of both the small spot channels and the large spot channels composing of the square super-lattice pattern increases as the air-concentration increases. In addition, the electron excited temperature of the large spot channels is higher than that of small spot channels. The difference of the electron excited temperature between small spot channels and large spot channels becomes more obvious as the air-concentration increases.

Citation Download Citation

Haitao Zhao, Lifang Dong, Weixia Xie, and Weili Fan "Photoelectric measurement of the characteristic of square super-lattice pattern in DBD", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381Q (8 January 2008); https://doi.org/10.1117/12.755986

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