Analysis of the influence of the radius of incident laser beam on the radius of melting area of semiconductor irradiated by long-pulse high-power laser

Weihuan Ding; Zhonghua Shen; Jian Lu; Xiaowu Ni

doi:10.1117/12.755994

4 January 2008 Analysis of the influence of the radius of incident laser beam on the radius of melting area of semiconductor irradiated by long-pulse high-power laser

Weihuan Ding, Zhonghua Shen, Jian Lu, Xiaowu Ni

Author Affiliations +

Proceedings Volume 6839, Nonlinear Optics: Technologies and Applications; 683919 (2008) https://doi.org/10.1117/12.755994
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Under the conditions of radius of the incident laser beam is much larger than the thermal diffusivity of the materials, the model has been established with the heat transfer theory and the finite element method. Analyze has been made out on the thermal interaction of long pulse laser and semiconductor Si and Ge. The influence of the radius of incident laser beam on the size of melting area on sample has been considered. The relation between the rate of the max melting radius on fused sample and the radius of incident laser beam Φ'/Φ and the laser fluence has been given out and discussed, which is of importance to the research on the interaction mechanism of the laser beam and semiconductor material.

Citation Download Citation

Weihuan Ding, Zhonghua Shen, Jian Lu, and Xiaowu Ni "Analysis of the influence of the radius of incident laser beam on the radius of melting area of semiconductor irradiated by long-pulse high-power laser", Proc. SPIE 6839, Nonlinear Optics: Technologies and Applications, 683919 (4 January 2008); https://doi.org/10.1117/12.755994

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