The DC electric field induced second-order nonlinear susceptibility of silicon crystals

Xiuhuan Liu; Zhanguo Chen; Gang Jia; Bao Shi; Yuhong Zhang; Ce Ren; Jianxun Zhao; Kun Cao; Shuang Wang

doi:10.1117/12.757146

4 January 2008 The DC electric field induced second-order nonlinear susceptibility of silicon crystals

Xiuhuan Liu, Zhanguo Chen, Gang Jia, Bao Shi, Yuhong Zhang, Ce Ren, Jianxun Zhao, Kun Cao, Shuang Wang

Proceedings Volume 6839, Nonlinear Optics: Technologies and Applications; 68391U (2008) https://doi.org/10.1117/12.757146
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Silicon crystal is a kind of centrosymmetric materials, which has no second-order optical effects at dipole approximation. However, the inversion symmetry of silicon crystals will be broken by the built-in field or the DC electric field applied to it. We theoretically studied the response of the third-order susceptibility to the electric field and deduced the effective second-order susceptibility tensors when the electric fields applied to silicon are along the [111], [110] and [001] directions, respectively. The results show that the forms of the effective second-order susceptibilities of Si are consistent with those of C_3V, C_2V and C_4V symmetry groups of crystals which indicate that silicon crystals should belong to C_3V, C_2Vand C_4V symmetry groups instead of O_h symmetry group, respectively. So silicon crystals will exhibit some second-order nonlinear optical properties corresponding to related symmetric crystals under the corresponding incident electric fields. This research method of the electric field-induced second-order nonlinear optical processes can also be used to other centrosymmetric materials.

Citation Download Citation

Xiuhuan Liu, Zhanguo Chen, Gang Jia, Bao Shi, Yuhong Zhang, Ce Ren, Jianxun Zhao, Kun Cao, and Shuang Wang "The DC electric field induced second-order nonlinear susceptibility of silicon crystals", Proc. SPIE 6839, Nonlinear Optics: Technologies and Applications, 68391U (4 January 2008); https://doi.org/10.1117/12.757146

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