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4 January 2008 Native deep level defects in ZnO single crystal grown by CVT method
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Abstract
Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density of 1016-1017cm-3. It has a slight increase after 900°C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youwen Zhao, Fan Zhang, Rui Zhang, Zhiyuan Dong, Xuecheng Wei, Yiping Zeng, and Jinmin Li "Native deep level defects in ZnO single crystal grown by CVT method", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410I (4 January 2008); https://doi.org/10.1117/12.760142
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