Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes

Zhiqiang Liu; Debo Guo; Xiaoyan Yi; Yu Chen; Libin Wang; Liangchen Wang; Guohang Wang

doi:10.1117/12.760221

4 January 2008 Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes

Zhiqiang Liu, Debo Guo, Xiaoyan Yi, Yu Chen, Libin Wang, Liangchen Wang, Guohang Wang

Author Affiliations +

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68410N (2008) https://doi.org/10.1117/12.760221
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Compared with conventional GaN based LEDs structure, vertical electrodes structure can improve the current uniformity to some extend. However, due to the presence of N-GaN series resistance, current crowing phenomenon still exist at the electrode edge of vertical structure GaN-based LEDs. The most common solutions to overcome these problems consist in using transparent current spreading contact layer, generally made of indium tin oxide (ITO). In this paper, the effect of indium tin oxide (ITO) layer on the current uniformity and the current distribution are analyzed by theoretical calculation. At last, vertical structure GaN-based LEDs was fabricated and the electrical character was measured. Experiment result exhibits good agreement with the theoretical calculation.

Citation Download Citation

Zhiqiang Liu, Debo Guo, Xiaoyan Yi, Yu Chen, Libin Wang, Liangchen Wang, and Guohang Wang "Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410N (4 January 2008); https://doi.org/10.1117/12.760221

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