Defect states of hydrogenated nanocrystalline silicon studied by surface photovoltage spectroscopy

Chunsheng Wang; Jinchuan Zhang; Wei Yu; Liping Wu; Wenge Ding; Guangsheng Fu

doi:10.1117/12.757676

4 January 2008 Defect states of hydrogenated nanocrystalline silicon studied by surface photovoltage spectroscopy

Chunsheng Wang, Jinchuan Zhang, Wei Yu, Liping Wu, Wenge Ding, Guangsheng Fu

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68411X (2008) https://doi.org/10.1117/12.757676
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Surface photovoltage spectroscopy (SPS) is used to determine the defect states of the nc-Si:H films which are prepared by using helicon wave plasma-enhanced chemical vapor deposition technique(HWP-CVD) under different substrate temperature. The films exhibit a 3-phase model, which suggests that nc-Si:H consists of crystalline grains surrounded by grain boundaries and embedded in an amorphous matrix. SPS measurement indicated that the nc-Si:H films have additional two types of additional defect states besides the occupied Si dangling bond states D₀/D_i and the empty Si dangling states D₊ in a-Si, which is attributed to the interface defect states between the nanocrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples increases with the temperature, which may be interpreted as a result of the bonded hydrogen release at the surface of nanocrystalline Si grains and in the amorphou matrix while increasing substrate temperature.

Citation Download Citation

Chunsheng Wang, Jinchuan Zhang, Wei Yu, Liping Wu, Wenge Ding, and Guangsheng Fu "Defect states of hydrogenated nanocrystalline silicon studied by surface photovoltage spectroscopy", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411X (4 January 2008); https://doi.org/10.1117/12.757676

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