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13 February 2008 High-efficiency, high-power diode laser chips, bars, and stacks
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Abstract
Leveraging improvements to device structures and cooling technologies, ultra-high-power bars have been integrated into multi-bar stacks to obtain CW power densities in excess of 2.8 kW/cm2 near 960 nm with spectral widths of <4nm FWHM. These characteristics promise to enable cost-effective solutions for a variety of applications that demand very high spatial and/or spectral brightness. Using updated device designs, mini-bar variants have been employed to derive CW powers of several tens of Watts near 940 nm on traditional single-emitter platforms. For example, >37 W CW have been obtained from 5-emitter devices on standard CuW CT heatsinks with AuSn solder. Near 808 nm, a PCE of 65% with a slope efficiency of 1.29 W/A has been demonstrated with a 20%-fill-factor, 2-mm-cavity-length bar.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanxuan Li, Frank Reinhardt, Irving Chyr, Xu Jin, Kiran Kuppuswamy, Terry Towe, Denny Brown, Oscar Romero, Daming Liu, Robert Miller, Touyen Nguyen, Trevor Crum, Tom Truchan, Ed Wolak, Jeff Mott, and James Harrison "High-efficiency, high-power diode laser chips, bars, and stacks", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760G (13 February 2008); https://doi.org/10.1117/12.763945
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