Translator Disclaimer
13 February 2008 High power high brightness single emitter laser diodes at Axcel Photonics
Author Affiliations +
High power, high brightness, single emitter laser diodes with different apertures from 5 μm to 1000 μm are reported on, in the wavelength range from 780 nm to 1060 nm. On going progress at Axcel Photonics for both single-mode and multi-mode laser diodes will be presented. These diode lasers show high slope efficiency, low threshold current and low voltage, etc. Laser diodes with different emitting apertures at 5μm, 50 μm, 90 μm, 200 μm, 400 μm, 1000 μm, are reported on and discussed in detail. The reliability data for different sized emitters is presented. These results demonstrated that Axcel's technologies enable laser diodes made from Al based material grown on GaAs substrates, which can reliably operate at high brightness and high power in the near infrared-wavelength range under wide range of emitting apertures. These laser diodes are suitable for a wide variety of applications including medical, material processing, graphics, pumping solid-state lasers and fiber lasers.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Gao, Zuntu Xu, Lisen Cheng, Kejian Luo, Kun Shen, and Andre Mastrovito "High power high brightness single emitter laser diodes at Axcel Photonics", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68761F (13 February 2008);


Back to Top