Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots

D. V. Martyshkin; C. Kim; I. S. Moskalev; V. V. Fedorov; S. B. Mirov

doi:10.1117/12.764210

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14 February 2008 Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots

D. V. Martyshkin, C. Kim, I. S. Moskalev, V. V. Fedorov, S. B. Mirov

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Proceedings Volume 6879, Photon Processing in Microelectronics and Photonics VII; 68791G (2008) https://doi.org/10.1117/12.764210
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr²⁺:ZnS QD powder (~ 27 nm grain size). Cr²⁺:ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.

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D. V. Martyshkin, C. Kim, I. S. Moskalev, V. V. Fedorov, and S. B. Mirov "Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots", Proc. SPIE 6879, Photon Processing in Microelectronics and Photonics VII, 68791G (14 February 2008); https://doi.org/10.1117/12.764210

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