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22 February 2008 Nonlinear excitations of semiconductor quantum wells with intense terahertz fields
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Abstract
The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.
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J. T Steiner, M. Kira, and S. W. Koch "Nonlinear excitations of semiconductor quantum wells with intense terahertz fields", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890D (22 February 2008); https://doi.org/10.1117/12.784330
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