Nitrogen-ion-implanted planar optical waveguides in Er-doped tellurite glass: fabrication and characterization

I. Bányász; S. Berneschi; I. Cacciari; M. Fried; T. Lohner; G. Nunzi-Conti; F. Pászti; S. Pelli; P. Petrik; G. C. Righini; A. Watterich; Z. Zolnai

doi:10.1117/12.768507

5 February 2008 Nitrogen-ion-implanted planar optical waveguides in Er-doped tellurite glass: fabrication and characterization

I. Bányász, S. Berneschi, I. Cacciari, M. Fried, T. Lohner, G. Nunzi-Conti, F. Pászti, S. Pelli, P. Petrik, G. C. Righini, A. Watterich, Z. Zolnai

Author Affiliations +

Proceedings Volume 6890, Optical Components and Materials V; 68901A (2008) https://doi.org/10.1117/12.768507
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Fabrication of channel waveguides in Er-doped tungsten-tellurite glasses was recently demonstrated. In order to get a deeper understanding of the process and to optimize the characteristics of the waveguides, we fabricated a set of planar waveguides, each of 7 mm × 7 mm lateral dimensions, in an Er-doped tellurite glass sample by implantation of 1.5 MeV nitrogen ions. Doses of the implanting ions ranged from 1 · 10¹⁶ to 8 · 10¹⁶ ions/cm². The samples were studied using interference phase contrast microscopy (Interphako), m-line spectroscopy and spectroscopic ellipsometry. The results show that a barrier layer of reduced refractive index was created around the range of the implanted ions at every dose. It is hoped that combination of the results obtained in these experiments with simulations for channel waveguides will make it possible to optimize ion-implanted fabrication of integrated optical components in this tellurite glass.

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I. Bányász, S. Berneschi, I. Cacciari, M. Fried, T. Lohner, G. Nunzi-Conti, F. Pászti, S. Pelli, P. Petrik, G. C. Righini, A. Watterich, and Z. Zolnai "Nitrogen-ion-implanted planar optical waveguides in Er-doped tellurite glass: fabrication and characterization", Proc. SPIE 6890, Optical Components and Materials V, 68901A (5 February 2008); https://doi.org/10.1117/12.768507

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