Chemical etching of nanocomposite metal-semiconductor films monitored by Raman spectroscopy and surface probe microscopy

Christopher C. Perry; Tina Brower; Chichang Zhang; Emanuel Waddell; Clayton W. Bates; James W. Mitchell

doi:10.1117/12.783857

7 March 2008 Chemical etching of nanocomposite metal-semiconductor films monitored by Raman spectroscopy and surface probe microscopy

Christopher C. Perry, Tina Brower, Chichang Zhang, Emanuel Waddell, Clayton W. Bates, James W. Mitchell

Author Affiliations +

Proceedings Volume 6891, Organic Photonic Materials and Devices X; 689116 (2008) https://doi.org/10.1117/12.783857
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The complementary tools of atomic force microscopy (AFM) and Raman spectroscopy are used to extract information on the microstructural properties of nanocomposite n-doped Si (n-Si) and Ag/n-Si films deposited on Si(111) substrates at 400 °C and 550 °C. AFM measurements indicated that Ag/n-Si films had grain sizes and roughness values one order of magnitude higher than n-doped Si films. The onset of metal-mediated crystallization of a-Si in Ag/n-Si films at ~ 400 °C is confirmed by Raman spectroscopy. Spectral Raman red-shifts of the transverse optical phonon region compared to monocrystalline silicon originate from the interplay of phonon confinement and higher defect density caused by n-type doping. Two protocols using the etchants ammonium fluoride - HF (2%::4% ) and ammonium citrate- acetic acid-hydrogen peroxide (2.5%::2.5%::2%) solutions were investigated. A comparison between non-etched and etched films showed little variability in roughness indicating retention of the microstructure.

Citation Download Citation

Christopher C. Perry, Tina Brower, Chichang Zhang, Emanuel Waddell, Clayton W. Bates, and James W. Mitchell "Chemical etching of nanocomposite metal-semiconductor films monitored by Raman spectroscopy and surface probe microscopy", Proc. SPIE 6891, Organic Photonic Materials and Devices X, 689116 (7 March 2008); https://doi.org/10.1117/12.783857

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