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7 February 2008 Ultrafast piezospectroscopy in semiconductor nanostructures
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We use the internal picosecond strain pulses to control the electron energy in a semiconductor quantum well. For generating the strain pulse a 100 nm thick metal transducer was hit by intense laser pulse and a strain pulse with duration ~10 ps and amplitude up to 0.1% was injected into a GaAs substrate. This strain pulse travels strongly directed through the crystal towards the quantum well generating at each momentary position a "nano-earthquake". When the quantum well is hit by this "earth quake", the exciton resonance is shifted on a value up to 10 meV on a ps time scale.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Akimov, A. V. Scherbakov, T. Berstermann, D. R. Yakovlev, P. J. S. van Capel, J. I. Dijkhuis, and M. Bayer "Ultrafast piezospectroscopy in semiconductor nanostructures", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689205 (7 February 2008);

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