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14 February 2008 Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor
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We have observed that the temperature of the electrons drifting under a relatively-high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e. the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field vs. electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100 fs. This value is consistent with the value measured previously from Raman scattering.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding, Kejia Wang, Yu Cao, Debdeep Jena, and Jacob B. Khurgin "Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689208 (14 February 2008);

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