Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

N. Buecking; S. Butscher; M. Richter; C. Weber; S. Declair; M. Woerner; K. Reimann; P. Kratzer; M. Scheffler; A. Knorr

doi:10.1117/12.768659

14 February 2008 Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases

N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler, A. Knorr

Author Affiliations +

Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 689209 (2008) https://doi.org/10.1117/12.768659
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

A theory of electron relaxation for electron gases in semiconductor quantum well structures and at semiconductor surfaces is presented. The electron relaxation is described by quantum-kinetic equations. In the nonlinear optical response of a two dimensional electron gas in a GaN quantum well, polaronic signatures are clearly enhanced compared to the linear response, if the pump pulse is tuned to the polaron energy. For the phonon-induced electron relaxation at Si (001) surface structures, the interplay of bulk and surface states yields a complex temporal relaxation dynamics depending on the slab thickness.

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N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler, and A. Knorr "Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689209 (14 February 2008); https://doi.org/10.1117/12.768659

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