Electron relaxation dynamics at the In-rich (100) surface of InP

Jodi Szarko; Liana Socaciu-Siebert; Antje Neubauer; Thomas Hannappel; Rainer Eichberger

doi:10.1117/12.779241

14 February 2008 Electron relaxation dynamics at the In-rich (100) surface of InP

Jodi Szarko, Liana Socaciu-Siebert, Antje Neubauer, Thomas Hannappel, Rainer Eichberger

Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 68921M (2008) https://doi.org/10.1117/12.779241
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The temporal relaxation of optically excited electrons at the In-rich reconstructed InP(100) surface was studied using time-resolved two-photon-photoemission spectroscopy (TR-2PPE). High-energy carriers were generated at laser pump energies chosen to populate hot electron bulk states or the well known C₂ surface state via resonant direct optical excitation. The different relaxation pathways arising from these population schemes involve Γ-L-Γ intervalley scattering and the transient occupation of an additional surface state, C₁. The dynamics of these processes were recorded with a novel experimental setup using two ultra-low power 150 KHz repetition rate sub-20 fs NOPAs enabling two-colour pump-probe experiments in the linear regime. These experiments provide useful information in understanding the dynamics of devices on the basis of this semiconductor medium such as solar cells and high-speed switching circuits.

Citation Download Citation

Jodi Szarko, Liana Socaciu-Siebert, Antje Neubauer, Thomas Hannappel, and Rainer Eichberger "Electron relaxation dynamics at the In-rich (100) surface of InP", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 68921M (14 February 2008); https://doi.org/10.1117/12.779241

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