Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

Guan-Ting Chen; Chia-Hua Chan; Chia-Hung Hou; Hsueh-Hsing Liu; Nai-Wei Shiu; Mao-Nan Chang; Chii-Chang Chen; Jen-Inn Chyi

doi:10.1117/12.764475

15 February 2008 Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography

Guan-Ting Chen, Chia-Hua Chan, Chia-Hung Hou, Hsueh-Hsing Liu, Nai-Wei Shiu, Mao-Nan Chang, Chii-Chang Chen, Jen-Inn Chyi

Author Affiliations +

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 689408 (2008) https://doi.org/10.1117/12.764475
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

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Guan-Ting Chen, Chia-Hua Chan, Chia-Hung Hou, Hsueh-Hsing Liu, Nai-Wei Shiu, Mao-Nan Chang, Chii-Chang Chen, and Jen-Inn Chyi "Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689408 (15 February 2008); https://doi.org/10.1117/12.764475

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