Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology

Jiunn-Yi Chu; Chen-Fu Chu; Chao-Chen Cheng; Wen-Huan Liu; Hao-Chun Cheng; Feng-Hsu Fan; Jui-Kang Yen; Chuong Anh Tran; Trung Doan

doi:10.1117/12.768191

15 February 2008 Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology

Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng, Wen-Huan Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen, Chuong Anh Tran, Trung Doan

Author Affiliations +

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68940X (2008) https://doi.org/10.1117/12.768191
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

GaN vertical LED on metal alloy substrate (VLEDMS) is a desirable technology suitable for solid state lighting application from the viewpoint of reliability and lighting efficacy performance. A new top surface engineering technique for efficient light extraction is employed to VLEDMS to improve power conversion efficiency further. Corrugated pyramid shaped (CPS) surfaces are developed and formed on VLEDMS. By using such structure, VLEDMS exhibit a great enhancement of around 20% in light output power, and a high efficiency of over 100 lumens per watt can also be achieved by white LEDs. In the life test, the light output power of VLEDMS chips drop only by less than 10% within 3,000 hours, and the chips can also endure over 1000 cycles of thermal shocks without significant variations in electro-optical performance. Therefore, the highly reliable and bright VLEDMS using CPS surface engineering technique is very suitable for the solid-state lighting application.

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Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng, Wen-Huan Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen, Chuong Anh Tran, and Trung Doan "Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940X (15 February 2008); https://doi.org/10.1117/12.768191

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